Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P(r)) and the non-volatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x = 0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2P(r) value of the BGdT capacitor was 75 mu C/cm(2) while it remained essentially constant up to 4.5 x 10(10) read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 mu C/cm(2) and a strong resistance against the imprinting failure. (c) 2006 Elsevier B.V. All rights reserved.