1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide

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1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Optimum Er3+ luminescence was obtained after an anneal of at least 5 min at 950 degrees C, and at least 1 at. % excess silicon in SRSO was necessary for the excitation of erbium to be dominated by carriers. The refractive index and the bulk waveguide loss of erbium-doped SRSO film with 0.1 at. % erbium and 1 at. % excess silicon after the optimal anneal treatment was 1.4817 and 4.0 dB/cm, respectively. Fabrication of an erbium-doped SRSO strip waveguide using the standard Si processing techniques and the guiding of internal 1.54 mu m Er3+ emission by such a strip waveguide are demonstrated. (C) 2000 American Institute of Physics. [S0021-8979(00)01215-9].
Publisher
AMER INST PHYSICS
Issue Date
2000-08
Language
English
Article Type
Article
Keywords

SI NANOCRYSTALS; LUMINESCENCE; SIO2-FILMS; EXCITATION; FILMS

Citation

JOURNAL OF APPLIED PHYSICS, v.88, no.4, pp.2160 - 2162

ISSN
0021-8979
URI
http://hdl.handle.net/10203/76010
Appears in Collection
NT-Journal Papers(저널논문)
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