DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JungHoon | ko |
dc.contributor.author | Kim, MJ | ko |
dc.date.accessioned | 2013-03-02T22:43:06Z | - |
dc.date.available | 2013-03-02T22:43:06Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.17, no.6, pp.3230 - 3234 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75928 | - |
dc.description.abstract | Erbium-doped hydrogenated amorphous silicon (a-Si:H) thin films were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 with concurrent sputtering of erbium. The oxygen and carbon contamination levels in all films were 1 X 10(19) and 3 X 10(19) cm(-3), respectively, and the erbium concentrations could be controlled from 0.13 to 1.1 at. % by adjusting the erbium bias voltage. The half width Gamma/2 of the Raman transverse-optic peak of the deposited films ranged from 32+/-1 to 36+/-1 cm(-1), increasing with the increasing Er concentration. Strong 1.54 mu m Er3+ luminescence with little temperature quenching was observed from all samples. The most intense Er3+ luminescence was observed from the as-deposited film with a deposition temperature of 380 degrees C and an erbium concentration of 0.13 at. %, showing that using the present method, erbium-doped a-Si:H films with good erbium optical activity and low structural disorder can be deposited directly while avoiding excessive contamination. (C) 1999 American Vacuum Society. [S0734-2101(99)02706-2]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GLOW-DISCHARGE | - |
dc.subject | H FILMS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | ELECTROLUMINESCENCE | - |
dc.title | Deposition and 1.54 mu m Er3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 with concurrent sputtering of erbium | - |
dc.type | Article | - |
dc.identifier.wosid | 000083788400011 | - |
dc.identifier.scopusid | 2-s2.0-0033419507 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 3230 | - |
dc.citation.endingpage | 3234 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Kim, MJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GLOW-DISCHARGE | - |
dc.subject.keywordPlus | H FILMS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.