Variational formulation of Poissons equation in semiconductor at quasi-equilibrium and its applications

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Variational formulation of Poisson's equation with Boltzmann carrier statistics at quasi-equilibrium is used to find analytical solutions of the potential distribution in multidimensional semiconductor devices with resonably good accuracy. To demonstrate this approach, short-channel effects in the threshold voltage of fully-depleted SOI MOSFET's are analyzed, The usefulness of our idea is extended further to determine the quasi-Fermi potential of the floating gate of an EEPROM device, which has been determined to be very difficult to find by conventional methods.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1997-09
Language
English
Article Type
Article
Keywords

THRESHOLD VOLTAGE MODEL; DEPLETED SOI MOSFETS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.44, no.9, pp.1507 - 1513

ISSN
0018-9383
URI
http://hdl.handle.net/10203/75915
Appears in Collection
EE-Journal Papers(저널논문)ME-Journal Papers(저널논문)
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