GENERALIZED DEFECT ANNIHILATION KINETICS FOR STRUCTURAL RELAXATION IN AMORPHOUS-SILICON

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A general approach to the dynamics of structural relaxation in amorphous silicon is developed. A form is chosen for the recombination kinetics of defects which removes the ad-hoc assumption made in previous approaches, namely that defects recombine only with others of identical activation energy. The generalized approach is tested quantitatively by modelling the structural relaxation of amorphous silicon and comparing the results with the experimental data. It is found that the generalized recombination kinetics formalism is necessary in order to describe accurately the time-resolved relaxation data.
Publisher
TAYLOR FRANCIS LTD LONDON
Issue Date
1995-07
Language
English
Article Type
Article
Keywords

ION MASS; DIFFUSION; DYNAMICS; FILMS

Citation

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, v.72, no.1, pp.1 - 11

ISSN
0141-8637
DOI
10.1080/13642819508239059
URI
http://hdl.handle.net/10203/75912
Appears in Collection
NT-Journal Papers(저널논문)
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