Dielectric properties of SrTiO3, and BST thin films fabricated using ECR-PEMOCVD
The SrTiO3 Thin films were deposited on Pt/SiO2/Si by ECR-PEMOCVD and their dielectric properties were investigated as a function of composition. The chemical bonding states of elements consisting these films were investigated using X-ray photoelectron spectroscopy (XPS) and Discrete Variational (DV)X alpha simulation. The asymmetry of composition dependence on dielectric properties was explained by the XPS data. Further, effectiveness of NH3 carrier gas over Ar to deposit SrTiO3 is discussed in detail. Based on these data, the thickness dependence of dielectric constant of BST films was explained.
- Publisher
- GORDON BREACH SCI PUBL LTD
- Issue Date
- 1998
- Language
- English
- Article Type
- Article
- Keywords
CHEMICAL-VAPOR-DEPOSITION; ACCESS MEMORY APPLICATION; MOCVD; (BA,SR)TIO3; PLASMA
- Citation
INTEGRATED FERROELECTRICS, v.21, no.1-4, pp.343 - 353
- ISSN
- 1058-4587
- Appears in Collection
- MS-Journal Papers(저널논문)
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