Dielectric properties of SrTiO3, and BST thin films fabricated using ECR-PEMOCVD

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The SrTiO3 Thin films were deposited on Pt/SiO2/Si by ECR-PEMOCVD and their dielectric properties were investigated as a function of composition. The chemical bonding states of elements consisting these films were investigated using X-ray photoelectron spectroscopy (XPS) and Discrete Variational (DV)X alpha simulation. The asymmetry of composition dependence on dielectric properties was explained by the XPS data. Further, effectiveness of NH3 carrier gas over Ar to deposit SrTiO3 is discussed in detail. Based on these data, the thickness dependence of dielectric constant of BST films was explained.
Publisher
GORDON BREACH SCI PUBL LTD
Issue Date
1998
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; ACCESS MEMORY APPLICATION; MOCVD; (BA,SR)TIO3; PLASMA

Citation

INTEGRATED FERROELECTRICS, v.21, no.1-4, pp.343 - 353

ISSN
1058-4587
URI
http://hdl.handle.net/10203/75778
Appears in Collection
MS-Journal Papers(저널논문)
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