Effect of deposition temperature on the crystallization mechanism of amorphous silicon films on glass

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The crystallization mechanism of amorphous Si films deposited on glass substrates by plasma enhanced chemical vapor deposition method was investigated. The deposition temperature varied from 200 to 400 degrees C and the films were crystallized at 600 degrees C in nitrogen. As the deposition temperature increased the nucleation rate was increased, but the nucleation activation energy was independent of the deposition temperature with a value of 3.8 eV. The results suggest that the pre-exponential factor in Arrhenius equation is dependent on the deposition temperature. The dependence of nucleation rate on deposition temperature was mainly due to the increased structural disorder during hydrogen evolution. The grain size was increased by introducing a double-layer structure of amorphous Si him, where the nucleation occurred other than at the Si/SiO2 interface.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1997-11
Language
English
Article Type
Article
Keywords

CHEMICAL VAPOR-DEPOSITION; SI FILMS; POLYCRYSTALLINE SILICON; F+ IMPLANTATION; RECRYSTALLIZATION; TRANSISTORS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.11, pp.6862 - 6866

ISSN
0021-4922
URI
http://hdl.handle.net/10203/75548
Appears in Collection
MS-Journal Papers(저널논문)
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