THE EFFECTS OF ARGON PLASMA TREATMENT ON SILOXANE SOG

Abstract

We have demonstrated that the quality of siloxane spin-on glass (SOG) films widely used as interlevel planarization dielectrics is improved significantly by curing in argon plasma. The wet etch rate of SOG film decreases with increasing plasma treatment temperature or treatment time, and is much lower than that of cured in a furnace. Long-time plasma treatment reduces the density of silanols (SI-OH) and methyl (-CH3) group, which act as adsorption sites of water. The role of metastable Ar appears to be very important to improve the SOG film.