193-nm photoresists based on norbornene copolymers with derivatives of bile acid

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We synthesized new chemically amplified photoresists for 193-nm lithography. Norbornene substituted with a derivative of bile acid was copolymerized with maleic anhydride by free radical polymerization. The resulting copolymers have good transmittance at 193 nm and possess excellent thermal stability up to 260 degrees C. With the standard developer, the resists formulated with the copolymers form 0.15-0.18 mu m patterns at doses of 6-7 mJ cm(-2) using an ArF excimer laser stepper.
Publisher
CHEMICAL SOC JAPAN
Issue Date
2000-04
Language
English
Article Type
Article
Keywords

LITHOGRAPHY; RESIST

Citation

CHEMISTRY LETTERS, v.149, pp.414 - 415

ISSN
0366-7022
DOI
10.1246/cl.2000.414
URI
http://hdl.handle.net/10203/74668
Appears in Collection
CH-Journal Papers(저널논문)
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