Optimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor

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dc.contributor.authorCho WKko
dc.contributor.authorCho iDHko
dc.contributor.authorKim, Moon Uhnko
dc.date.accessioned2013-03-02T17:01:59Z-
dc.date.available2013-03-02T17:01:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-11-
dc.identifier.citationINTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, v.42, no.22, pp.4143 - 4152-
dc.identifier.issn0017-9310-
dc.identifier.urihttp://hdl.handle.net/10203/74589-
dc.description.abstractAn optimization procedure is devised to find the inlet velocity profile that yields as uniform an epitaxial layer as possible in a vertical MOCVD reactor. It involves the solution of fully elliptic equations of motion, temperature, and concentration; the process is highly nonlinear and has been efficiently treated by breaking it into a series of linear problems. The optimal profile approximated by a 6th-degree Chebyshev polynomial is very successful in reducing the spatial non-uniformity of the growth rate. The optimization is particularly effective when the Reynolds number is high and the inlet-to-wafer distance becomes large. It is also found that a properly constructed inlet velocity profile can suppress the buoyancy driven secondary flow and improve the growth-rate uniformity. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPergamon-Elsevier Science Ltd-
dc.subjectSTAGNATION POINT FLOW-
dc.subjectTRANSPORT PHENOMENA-
dc.subjectMOCVD REACTORS-
dc.subjectMOVPE GROWTH-
dc.titleOptimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor-
dc.typeArticle-
dc.identifier.wosid000082111300006-
dc.identifier.scopusid2-s2.0-0032833310-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.issue22-
dc.citation.beginningpage4143-
dc.citation.endingpage4152-
dc.citation.publicationnameINTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER-
dc.contributor.localauthorKim, Moon Uhn-
dc.contributor.nonIdAuthorCho WK-
dc.contributor.nonIdAuthorCho iDH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSTAGNATION POINT FLOW-
dc.subject.keywordPlusTRANSPORT PHENOMENA-
dc.subject.keywordPlusMOCVD REACTORS-
dc.subject.keywordPlusMOVPE GROWTH-
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