Effect of atomic hydrogen on the growth of Ge/Si(100)

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Dynamically supplied atomic hydrogen was used for a surfactant growth of Ce on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to similar to 1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new ''pin holes'' are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments. (C) 1997 American Vacuum Society.
Publisher
AMER INST PHYSICS
Issue Date
1997
Language
English
Article Type
Article; Proceedings Paper
Keywords

MEDIATED EPITAXIAL-GROWTH; SCANNING-TUNNELING-MICROSCOPY; DIMER EXCHANGE; STRAIN; SURFACTANTS; SI(100)

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.3, pp.927 - 929

ISSN
0734-2101
DOI
10.1116/1.580624
URI
http://hdl.handle.net/10203/68975
Appears in Collection
PH-Journal Papers(저널논문)
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