A comparison of the optical characteristics of AlGaN, GaN, and InGaN thin films

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We have investigated the optical properties of InGaN, GaN, and AlGaN epilayers using photoluminescence (PL), PL excitation, time-resolved FL, and optically pumped stimulated emission (SE) spectroscopy. The InGaN layers had a larger (i) Stokes shift, (ii) spectral broadening, (iii) decay time, and (iv) PL redshift with time than AlGaN layers of comparable alloy composition. The optically pumped SE behavior of InGaN layers is significantly different than that of GaN and AlGaN layers. This is attributed to the suppression of nonradiative recombination and the elimination of below-gap induced absorption in highly excited InGaN alloys, effects that accompany the incorporation of indium into GaN. In contrast, the SE behavior of AlGaN layers is similar to that of highly excited GaN.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
1999-11
Language
English
Article Type
Article; Proceedings Paper
Keywords

MULTIPLE-QUANTUM WELLS; RECOMBINATION DYNAMICS; LOCALIZED EXCITONS

Citation

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.216, no.1, pp.227 - 231

ISSN
0370-1972
DOI
10.1002/(SICI)1521-3951(199911)216:1<227::AID-PSSB227>3.0.CO;2-S
URI
http://hdl.handle.net/10203/68156
Appears in Collection
PH-Journal Papers(저널논문)
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