ME-Journal Papers(저널논문)

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Collection's Items (Sorted by Submit Date in Descending order): 161 to 180 of 12319

161
Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies

Tan, James; Shi, Xuncheng; Lu, Kunze; Joo, Hyo-Jun; Kim, Youngmin; Chen, Melvina; Zhang, Lin; et al, OPTICS LETTERS, v.48, no.16, pp.4269 - 4271, 2023-08

162
Laser-induced graphene formation on recycled woods for green smart furniture

Nam, Han Ku; Choi, Jungrak; Jing, Tongmei; Yang, Dongwook; Lee, Younggeun; Kim, Young‐Ryeul; Le, Truong‐Son Dinh; et al, ECOMAT, v.6, no.4, 2024-04

163
Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Jung, Woo-Shik; Park, Jin-Hong; Nainani, Aneesh; Nam, Donguk; Saraswat, Krishna C., APPLIED PHYSICS LETTERS, v.101, no.7, 2012-08

164
Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nam, Donguk; Sukhdeo, David S.; Kang, Ju-Hyung; Petykiewicz, Jan; Lee, Jae Hyung; Jung, Woo Shik; Vuckovic, Jelena; et al, NANO LETTERS, v.13, no.7, pp.3118 - 3123, 2013-07

165
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser

Dutt, Birendra; Lin, Hai; Sukhdeo, Devanand S.; Vulovic, Boris M.; Gupta, Suyog; Nam, Donguk; Saraswat, Krishna C.; et al, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.19, no.5, 2013-09

166
Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser

Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.20, no.4, 2014-07

167
Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS LETTERS, v.39, no.21, pp.6205 - 6208, 2014-11

168
Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I.; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS EXPRESS, v.23, no.12, pp.15816 - 15823, 2015-06

169
Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Sukhdeo, David S.; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS EXPRESS, v.23, no.13, pp.16740 - 16749, 2015-06

170
Ge microdisk with lithographically-tunable strain using CMOS-compatible process

Sukhdeo, David S.; Petykiewicz, Jan; Gupta, Shashank; Kim, Daeik; Woo, Sungdae; Kim, Youngmin; Vuckovic, Jelena; et al, OPTICS EXPRESS, v.23, no.26, pp.33249 - 33254, 2015-12

171
Impact of minority carrier lifetime on the performance of strained germanium light sources

Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, OPTICS COMMUNICATIONS, v.364, pp.233 - 237, 2016-04

172
Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities

Petykiewicz, Jan; Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Buckley, Sonia; Piggott, Alexander Y.; Vuckovic, Jelena; et al, NANO LETTERS, v.16, no.4, pp.2168 - 2173, 2016-04

173
Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers

Sukhdeo, David; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna; Dutt, Birendra; Nam, Donguk, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1307 - 1310, 2016-10

174
Anomalous threshold reduction from ⟨ 100 ⟩ uniaxial strain for a low-threshold Ge laser

Sukhdeo, David S.; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra Raj; Nam, Donguk, OPTICS COMMUNICATIONS, v.379, pp.32 - 35, 2016-11

175
Strained germanium thin film membrane on silicon substrate for optoelectronics

Nam, Donguk; Sukhdeo, Devanand; Roy, Arunanshu; Balram, Krishna; Cheng, Szu-Lin; Huang, Kevin Chih-Yao; Yuan, Ze; et al, OPTICS EXPRESS, v.19, no.27, pp.25866 - 25872, 2011-12

176
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser

Nam, Donguk; Sukhdeo, David; Cheng, Szu-Lin; Roy, Arunanshu; Huang, Kevin Chih-Yao; Brongersma, Mark; Nishi, Yoshio; et al, APPLIED PHYSICS LETTERS, v.100, no.13, 2012-03

177
Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

Nam, Ju Hyung; Alkis, Sabri; Nam, Donguk; Afshinmanesh, Farzaneh; Shim, Jaewoo; Park, Jin-Hong; Brongersma, Mark; et al, JOURNAL OF CRYSTAL GROWTH, v.416, pp.21 - 27, 2015-04

178
Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping

Dutt, Birendra (Raj); Sukhdeo, Devanand S.; Nam, Donguk; Vulovic, Boris M.; Yuan, Ze; Saraswat, Krishna C., IEEE PHOTONICS JOURNAL, v.4, no.5, pp.2002 - 2009, 2012-10

179
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser

Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.2, 2016-02

180
Enhancing Sensitivity and Selectivity: Morphological Modification and Chemical Functionalization within Confined Structures

Adhawiyah, Rafita Erli; Lee, Jungchul, INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING, v.25, no.4, pp.875 - 895, 2024-04

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