Deep-red (770 nm) top-surface-emitting vertical-cavity AlGaAs lasers are fabricated and operated continuously at room temperature. An Al0.14Ga0.86As superlattice is used for an active-gain medium. Efficient current funneling is achieved by deep proton implantation. CW threshold currents are 4.6 and 6.3 mA at 3.9 and 3.4 V bias for 10 and 15-mu-m diameter lasers, respectively. The maximum CW output power is > 1.1 mW at room temperature without heatsink.