GROWTH MODE OF TI-THIN FILMS ON SI(111) AND DOUBLE HETEROEPITAXIAL GROWTH OF EPI-SI EPI-C54 TISI2 SI(111)

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The growth mode of a Ti film on a Si(111)-7 X 7 reconstructed surface and the solid-phase heteroepitaxial growth of Si/C54 TiSi2/Si(111) were investigated by X-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. The growth mode of the Ti film is the Stransky-Krastanov type when the substrate temperature is room temperature. The orientation relationships between the epitaxial C54 TiSi2 and the Si(111) substrate are TiSi2[141BAR] parallel-to Si[011BAR] and TiSi2(202) parallel-to Si(111), and the matching face relationships for the epi-Si/epi-C54 TiSi2/Si(111) structure are Si(111) parallel-to C54 TiSi2(202BAR) parallel-to Si(111) without a misorientation angle. The microstructures of the interface show that the interface is abrupt and semicoherent. The best result for the growth of the epi-Si/epi-C54 TiSi2/Si(111) structure was obtained by depositing Si film on the C54 TiSi2 at 600-degrees-C followed by in situ annealing at 800-degrees-C for 10 min in UHV.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1993-08
Language
English
Article Type
Article
Keywords

EPITAXIAL-GROWTH; ROOM-TEMPERATURE; SILICIDE FORMATION; SUBSTRATE; INTERFACE; HETEROSTRUCTURES; (111)SI; C54

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, no.4, pp.407 - 412

ISSN
0374-4884
URI
http://hdl.handle.net/10203/60620
Appears in Collection
MS-Journal Papers(저널논문)
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