At present, as the scaling down in CMOS technology continues up to tens of GHz of the $f_max$ or $f_T$, CMOS technology would be adoptable in RF applications, especially for the aspect of low cost and high level integration .
In this work, for the aspect of low-cost and system-on-a-chip, especially for the RF front-end of digital TV tuner, a low noise IF amplifier and a downconversion mixer are discussed. In addition, for a successful design of RF circuit using CMOS technology, an accurate device model is very important. To find out the optimum structure of MOSRETs, the analysis of the characteristics at high frequency is performed. The RFIC has been fabricated in ETRI 0.8$\mum$ CMOS technology on a high resistivity silicon substrate. The CMOS technology with high resistivity silicon substrate can reduce the substrate coupling loss and noise.
The measurements of RFIC are accomplished on on-wafer and packaged conditions. The IF amplifier has a power gain of 11 dB,$IIP_3$ of - 6.8dBm, and noise figure of 7dB. The down mixer has a power conversion gain of 12.4dB, $IIP_3$ of-6.8dBm, and noise figure of 14dB.