A 900 MHz 0.8 um CMOS IF amplifier and down-conversion mixer for RF applications = RF용 900 MHz 0.8 um CMOS IF 증폭기 및 하향 주파수변환기 설계

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At present, as the scaling down in CMOS technology continues up to tens of GHz of the $f_max$ or $f_T$, CMOS technology would be adoptable in RF applications, especially for the aspect of low cost and high level integration [1]. In this work, for the aspect of low-cost and system-on-a-chip, especially for the RF front-end of digital TV tuner, a low noise IF amplifier and a downconversion mixer are discussed. In addition, for a successful design of RF circuit using CMOS technology, an accurate device model is very important. To find out the optimum structure of MOSRETs, the analysis of the characteristics at high frequency is performed. The RFIC has been fabricated in ETRI 0.8$\mum$ CMOS technology on a high resistivity silicon substrate. The CMOS technology with high resistivity silicon substrate can reduce the substrate coupling loss and noise. The measurements of RFIC are accomplished on on-wafer and packaged conditions. The IF amplifier has a power gain of 11 dB,$IIP_3$ of - 6.8dBm, and noise figure of 7dB. The down mixer has a power conversion gain of 12.4dB, $IIP_3$ of-6.8dBm, and noise figure of 14dB.
Advisors
Lee, Sang-Gugresearcher이상국researcher
Description
한국정보통신대학원대학교 : 공학부,
Publisher
한국정보통신대학교
Issue Date
2001
Identifier
392032/225023 / 000983851
Language
eng
Description

학위논문(석사) - 한국정보통신대학원대학교 : 공학부, 2001, [ v, 77 p. ]

Keywords

IF Amplifier; Down-Conversion Mixer; 하향 주파수변환기; 증폭기

URI
http://hdl.handle.net/10203/54701
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=392032&flag=dissertation
Appears in Collection
School of Engineering-Theses_Master(공학부 석사논문)
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