ECR 플라즈마 기상화학증착법에 의한 초고집적 회로의 기억소자용 탄탈륨 산화 박막의 제조 및 특성에 관한 연구A study on the tantalum oxide dielectric thin films for memory devices of ULSI by electron cyclotron resonance plasma enhanced chemical vapor deposition
- Advisors
- 이원종researcher; Lee, Won-Jongresearcher
- Description
- 한국과학기술원 : 전자재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1993
- Identifier
- 68567/325007 / 000901112
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ iii, 85 p. ]
- Keywords
Electron cyclotron resonance plamma enhanced chemical vapor deposition.
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.