유도결합 $N_2O$ 플라즈마를 이용한 실리콘 산화막의 특성과 다결정 실리콘 박막 트랜지스터에의 응용에 관한 연구A study on the characteristics of inductively coupled $N_2O$ plasma silicon oxide and its application to polycrystalline silicon thin film transistors
- Advisors
- 안병태researcher; Ahn, Byung-Taeresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2001
- Identifier
- 165933/325007 / 000993333
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 2001.2, [ 77 p. ]
- Keywords
전계효과 이동도; 다결정 실리콘 박막 트랜지스터; 유도결합 플라즈마; inductively coupled plasma (ICP); field effect mobility; effective charge density; poly-Si TFT
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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