Inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) 법으로 증착한 비정질 질화규소 박막의 특성Characterization of amorphous silicon nitride thin film deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD)
- Advisors
- 배병수researcher; Bae, Byeong-Sooresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1997
- Identifier
- 113163/325007 / 000953642
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 1997.2, [ v, 98 p. ]
- Keywords
광학적 대간격; 수소량; 굴절율; 유도플라즈마화학증착법; Urbach 에너지; Urbach energy; Optical band gap; Hydrogen content; Refractive index; ICP-CVD
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.