MBE 방법으로 증착된 $Si_{1-x}Ge_x$ 박막의 응력완화에 관한 연구A study on the strain relaxation of $Si_{1-x}Ge_x$ thin deposited using molecular beam epitaxy
- Advisors
- 천성순researcher; Chun, Soung-Soonresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1996
- Identifier
- 106601/325007 / 000943473
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 1996.2, [ 77 p. ]
- Keywords
응력 완화; 분자선 에피텍시; 바이어스에 의한 분자선 에피텍시; Potential enhanced MBE; Strain relaxation; MBE
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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