극자외선 리소그래피 하부 무반사층용 fluorinated silicon nitride 박막의 제조 및 특성분석Fabrication and characterization of fluorinated silicon nitride thin film for the bottom antireflective layer in deep ultraviolet lithography
- Advisors
- 노광수researcher; No, Kwang-Sooresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1998
- Identifier
- 143466/325007 / 000955335
- Language
- kor
- Description
학위논문(박사) - 한국과학기술원 : 재료공학과, 1998.8, [ xv, 158 p. ]
- Keywords
ERD-TOF 조성; 무반사층 디자인 시뮬레이터; 플로리네이티드 실리콘 나이트라이드 박막; 하부 무반사층; 극자외선 리소그래피; 산화기구; Oxidation mechanism; ERD-TOF composition; BARL design simulator; Fluorianted silicon nitride thin film; Bottom antireflective layer (BARL); DUV lithography
- Appears in Collection
- MS-Theses_Ph.D.(박사논문)
- Files in This Item
- There are no files associated with this item.
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