(A) new dynamic threshold SOI inverter using active body-bias = 활성 바디 바이어스를 이용한 새로운 동적 문턱전압 SOI 인버터

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 292
  • Download : 0
We propose a new high speed and low power SOI(Silicon-On-Insulator) inverter circuit with dynamic threshold voltage that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated extensively by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other previously reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5V, the proposed circuit operates 27% faster than the conventional SOI circuit with almost the same power dissipation. The use of retrograde doping in the main MOSFETs can further improves the circuit performance.
Advisors
Shin, Hyung-Cheolresearcher신형철researcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
156233/325007 / 000973045
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.8, [ v, 46 p. ]

Keywords

Body bias; Inverter; SOI; Dynamic threshold; Low power; 저전력; 바디 바이어스; 인버터; SOI; 동적 문턱전압

URI
http://hdl.handle.net/10203/37235
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=156233&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0