Gallium phosphide and zinc selenide nanowires

Abstract

Non-catalytic Growth and Characterization of Gallium Phosphide Nanowires Gallium phosphide (GaP) is a II-VI semiconductor with a band gap of 2.26 eV and can be used as a building block in nanodevice. We have synthesized GaP nanowires by chemical vapor deposition (CVD) method without catalyst. The nanowires were grown by vaporization of GaP and Ga2O3 powders and the structures were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), and X-ray diffraction (XRD). The diameter of GaP nanowires is about 20 ~ 40 nm and the length is up to several hundreds of micrometers. Synthesis and Characterization of Zinc Selenide Nanowires Zinc selenide (ZnSe) has attracted extensive attention due to its wide applications as green-blue emission and laser structures. We successfully synthesized ZnSe nanowires by CVD method with a gold catalyst. Synthesized nanowires were characterized by SEM, TEM, XRD and PL. Analysis shows that the nanowires have single crystalline structures. The diameter of ZnSe nanowire is about 20 ~ 50 nm and the length is up to several tens of micrometers. PL spectrum shows characteristic emission peak around 458 nm. Fabrication of Nanodevices Based on Nanowire Semiconducting nanowires could function as building blocks for nanoscale electronics because they can transport electrons and holes. ZnSe nanowires as semiconducting material are expected to change the electrical resistance or conductance depending on surrounding conditions. Here, we report a bottom-up approach for nanodevices through fabrication process of a device based on ZnSe nanowire. The ZnSe nanowire device was fabricated by e-beam lithography and metal deposition. The electrical property of the device are being measured. We will present the fabrication process of nanodevices.