DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Se-Hun | - |
dc.contributor.advisor | 김세훈 | - |
dc.contributor.author | Lim, Do-Kyung | - |
dc.contributor.author | 임도경 | - |
dc.date.accessioned | 2011-12-13T04:30:58Z | - |
dc.date.available | 2011-12-13T04:30:58Z | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=268763&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/31687 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 화학과, 2007. 8, [ vii, 55 p. ] | - |
dc.description.abstract | $\bold{Structures and Electronic Properties of Self-assembled Pt Silicide Nanowires on Si(100)$ We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunneling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 $\times$ 2) reconstructions also appear adjacent to the tetragonal $Pt_2Si$ nanowires. Formation of the $Pt_2Si$ nanowires is attributed to the anisotropic lattice mismatches between the tetragonal $Pt_2Si$ structure and Si(100). Scanning tunneling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy. $\bold{Unidirectional Pt Silicide Nanowires Grown on Vicinal Si(100)}$ The formation and electronic properties of unidirectional $Pt_2Si$ nanowires grown on a Si(100)-2° off surface were investigated. We found that $Pt_2Si$ nanowires were formed along the step edge of Si(100)-2° off surface with c(4$\times$6) reconstructions occurred on the terrace of Si(100) using scanning tunneling microscopy and low energy electron diffraction. Stoichiometry of grown nanowires was found to be $Pt_2Si$ by high resolution core-level spectroscopy. Electronic band structures parallel and perpendicular to the nanowire direction are found anisotropic. The surface state induced by $Pt_2Si$ nanowires was also observed in the angle-resolved photoemission spectra taken along the nanowires. A clear free-electron like band dispersion was not observed in the valence level spectra, however, the existence of the density of states at the Fermi energy level indicates that $Pt_2Si$ nanowires are metallic. $\bold{Resistivity Measurement of Pt Silicide Nanowires Using Double-Scanning-Probe Tunneling Microscopy}$ The resistivities of Pt silicide nanowires with the widths less than 10 nm were measured. Pt silicide nanowires consist ... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | nanowire | - |
dc.subject | Pt silicide | - |
dc.subject | scanning tunneling microscopy | - |
dc.subject | resistivity | - |
dc.subject | angle resolved photoemission spectroscopy | - |
dc.subject | 나노선 | - |
dc.subject | 백금 실리사이드 | - |
dc.subject | 주사터널링현미경 | - |
dc.subject | 비저항 | - |
dc.subject | 광전자분광분석 | - |
dc.subject | nanowire | - |
dc.subject | Pt silicide | - |
dc.subject | scanning tunneling microscopy | - |
dc.subject | resistivity | - |
dc.subject | angle resolved photoemission spectroscopy | - |
dc.subject | 나노선 | - |
dc.subject | 백금 실리사이드 | - |
dc.subject | 주사터널링현미경 | - |
dc.subject | 비저항 | - |
dc.subject | 광전자분광분석 | - |
dc.title | A study on formation and physico-chemical properties of Pt silicide nanowires on Si(100) surface | - |
dc.title.alternative | Si(100) 표면에서의 백금 실리사이드 나노선 형성 및 물리화학적 성질 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 268763/325007 | - |
dc.description.department | 한국과학기술원 : 화학과, | - |
dc.identifier.uid | 020035252 | - |
dc.contributor.localauthor | Kim, Se-Hun | - |
dc.contributor.localauthor | 김세훈 | - |
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