DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Se-Hun | - |
dc.contributor.advisor | 김세훈 | - |
dc.contributor.author | Kim, An-Soon | - |
dc.contributor.author | 김안순 | - |
dc.date.accessioned | 2011-12-13T04:30:10Z | - |
dc.date.available | 2011-12-13T04:30:10Z | - |
dc.date.issued | 2005 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=244509&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/31636 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 화학과, 2005.2, [ ix, 72 p. ] | - |
dc.description.abstract | Adsorption and thermal stability of ethylene on Ge(100) The adsorption structures and thermal desorption behavior of ethylene ($C_2H_4$) on Ge(100) have been investigated using scanning tunneling microscopy (STM) and temperature programmed desorption (TPD) in ultrahigh vacuum (UHV). It is indicated on the basis of STM study that $C_2H_4$ molecule initially adsorbs onto the Ge(100) surface with two types of configurations: (i) on-top of a single Ge-Ge dimer (on-top) and (ii) paired end-bridge between two neighboring Ge dimers in the same dimer row (paired end-bridge). TPD measurements show that chemisorbed $C_2H_4$ desorbs from Ge(100) nondissociatively with two different desorption features, denoted as α (385 K) and β (405 K). STM measurements after annealing at various Ge surface temperatures indicate that the α state (β state) corresponds to the on-top (paired end-bridge) configuration. STM-induced selective desorption of ethylene from $C_2H_4$/Ge(100) surfaces A scanning-tunneling microscope has been used to induce efficient local desorption of ethylene from Ge(100) at low current (100 pA), sample biases (~ -3.4 V), and room temperature. The desorption probability was measured as a function of both tunneling current and sample bias voltages. The desorption behavior may be explained by positive ion resonant inelastic tunneling mechanism. We have demonstrated that only on-top configurations of ethylene on Ge(100) desorb at -3.0 V of sample bias where the paired end-bridge retains. It is related to the different binding energy as well as the position of $1b_{3g}$ orbital (σGe-C) which is closer to Fermi level for the on-top configuration compared to the paired end-bridge configuration. Surface reactions of bifunctional molecules; ethylene diamine and 1,4-phenylene diisocyanate on Ge(100)-2×1 Surface reactions of bifunctional molecules, ethylene diamine and 1,4-phenylene diisocyanate, have been investigated on the Ge(100)-2×1 using multiple internal reflection i... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | surface reaction | - |
dc.subject | layer-by-layer growth | - |
dc.subject | adsorption | - |
dc.subject | STM | - |
dc.subject | Ge(100)m | - |
dc.subject | 게르마늄 표면 | - |
dc.subject | 표면반응 | - |
dc.subject | 초미세 층간 성장 | - |
dc.subject | 흡착 | - |
dc.subject | 주사탐침 현미경 | - |
dc.title | Hybridization of organic molecules with a Ge(100) surface | - |
dc.title.alternative | Ge(100) 반도체 표면과 유기분자들과의 하이브리드 형성에 관한 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 244509/325007 | - |
dc.description.department | 한국과학기술원 : 화학과, | - |
dc.identifier.uid | 020015060 | - |
dc.contributor.localauthor | Kim, Se-Hun | - |
dc.contributor.localauthor | 김세훈 | - |
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