Schottky contact-based light detection device and light detection method using same쇼트키 접합 기반 광 검출소자 및 이를 이용한 광 검출방법

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The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.
Assignee
KAIST
Country
US (United States)
Application Date
2021-05-21
Application Number
17326603
Registration Date
2023-08-08
Registration Number
11721782
URI
http://hdl.handle.net/10203/313273
Appears in Collection
EE-Patent(특허)
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