학위논문(석사) - 한국과학기술원 : 신소재공학과, 2019.8,[viii, 76 p. :]
ferroelectricity▼ahafnium-zirconium oxide($Hf_{0.5}Zr_{0.5}O_2$)▼aruthenium oxide($RuO_2$)▼aatomic layer deposition(ALD)▼atitanium nitride(TiN)▼ametal-ferroelectric-metal(MFM) capacitor▼aoxygen vacancy($V_o$)▼areliability▼awake-up effect▼anon-volatile memory; 강유전성▼a하프늄-지르코늄 옥사이드▼a루테늄 옥사이드▼a원자층 증착법▼a타이타늄 나이트라이드▼a금속-강유전체-금속 캐패시터▼a산소 결원▼a신뢰성▼a웨이크-업 효과▼a비휘발성 메모리
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