Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Abstract

The current-voltage characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTTs) are discussed. The n-type SBTTs with 60 nm gate lengths shows typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10(5) at low drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current, respectively. This phenomenon is explained by using drain induced Schottky barrier thickness thinning effect. (C) 2003 American Institute of Physics.