Multiscale Fluidic Channels via Internal Oxidation and Oxide Etching of Self-Assembled Silicon-on-Nothing Structures

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This paper reports a novel fabrication method for multiscale fluidic channels ranging from sub-20 nm to a few mu m in their hydraulic diameters, D-h, exhibiting height-to-width ratio [or aspect ratio (AR)] close to unity only relying on internal oxidation and oxide etching of self-assembled silicon-on-nothing (SON) structures. We find that internal oxidation occurs uniformly along the longitudinal direction of the SON microchannels and time-controlled thermal oxidation can offer nanochannels with the minimum D-h of similar to 10 nm. Third, the enlarged circular microchannels with the maximum D-h of similar to 4500 nm are achieved through wet etching of internal silicon dioxide. The smallest nanochannel demonstrated exhibits the length-to-diameter ratio of similar to 60 000 and the ratio of the largest microchannel cross section to the smallest nanochannel cross section is similar to 200 000.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-10
Language
English
Article Type
Article
Citation

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.28, no.5, pp.865 - 868

ISSN
1057-7157
DOI
10.1109/JMEMS.2019.2926378
URI
http://hdl.handle.net/10203/268098
Appears in Collection
ME-Journal Papers(저널논문)
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