Fabrication and characterization of ferroelectric hafnium oxide thin film for nonvolatile memories = 비휘발성 메모리 구현을 위한 강유전성 산화하프늄 박막의 제작 및 특성 평가

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In recent years, there has been increasing demand for the next-generation memory that can replace the current memory devices. Many researchers have devoted their efforts to develop the universal nonvolatile memory devices, such as resistive switching memory, phase change memory, and magnetoresistance memory. Although ferroelectric memory device was first suggested in 1950s, scaling issue and CMOS compatibility problem remain unsolved until the discovery of ferroelectricity in hafnium oxide ($HfO_2$) film. The $HfO_2$ based memory can utilize the current CMOS technologies, and also it is relatively free from the scaling issue. In this thesis, fabrication and characterization of ferroelectric $HfO_2$ film are demonstrated for the application to future nonvolatile memories. By doping small amount of aluminum oxide ($Al_2O_3$) in $HfO_2$ film, ferroelectric property was achieved. The ferroelectric properties were examined depending on the dopant concentration, annealing condition, electrode materials, and deposition order of $HfO_2$ and $Al_2O_3$ in atomic layer deposition. The origin of ferroelectricity in $HfO_2$ film was thoroughly investigated through XPS, ToF-SIMS, GI-XRD, and TEM.
Advisors
Lee, Keon Jaeresearcher이건재researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2018
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2018.2,[v, 57 p. :]

Keywords

ferroelectricity▼ahafnium oxide▼anonvolatile memory; 강유전성▼a산하하프늄▼a비휘발성 메모리

URI
http://hdl.handle.net/10203/266490
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=733913&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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