Effects of proton and ion beam radiation on magnetic tunnel junctions

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 36
  • Download : 0
Conventional semiconductor-based electronic devices can cause errors when they are exposed to cosmic rays. Magnetic memory has been proposed as an alternative because it consists of a metal structure free from radiation-induced errors in principle. In this study, we investigated the effects of proton and Cr ion irradiations on the magnetic and electric properties of a magnetic tunnel junction (MTJ). We observed that the magnetic hysteresis and magnetoresistance of MTJ were not affected by proton irradiation of an energy of 20 MeV and dose levels up to 1 x 10(18)/m(2), thus demonstrating good radiation hardness in response to the proton beam. On the other hand, when a MTJ was irradiated by a Cr ion beam of an energy of 20 keV and dose levels up to 1 x 10(18)/m(2), its magnetic properties or magnetoresistance deteriorated, depending on the layer structure of the MTJ. A simulation study shows that this degradation may stem from radiation-energy dependent displacement damage in the magnetic layers, which can be avoided by the introduction of a proper protective layer.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2019-09
Language
English
Article Type
Article
Citation

THIN SOLID FILMS, v.686

ISSN
0040-6090
DOI
10.1016/j.tsf.2019.137432
URI
http://hdl.handle.net/10203/265543
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0