DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Gwang Hyuk | ko |
dc.contributor.author | Park, Jung Hoon | ko |
dc.contributor.author | Lee, Khang June | ko |
dc.contributor.author | Lee, Geon-Beom | ko |
dc.contributor.author | Jeon, Hyun Bae | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Yu, Kyoungsik | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2019-07-18T05:35:58Z | - |
dc.date.available | 2019-07-18T05:35:58Z | - |
dc.date.created | 2019-01-28 | - |
dc.date.created | 2019-01-28 | - |
dc.date.created | 2019-01-28 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.7, pp.7626 - 7634 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/263356 | - |
dc.description.abstract | n this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are transferred on to a Si layer; the resulting Si-MoS2 p-n photodiode shows excellent performance with a responsivity (R) and detectivity (D*) of 76.1 A/W and 1012 Jones, respectively. In addition, the effect of the thickness of the depletion layer of the Si-MoS2 heterojunction on performance is investigated using the depletion layer model; based on the obtained results, we optimize the photoresponse of the device by varying the MoS2 thickness. Furthermore, low-frequency noise measurement is performed for the fabricated devices. The optimized device shows a low noise equivalent power (NEP) of 7.82×10-15 W Hz-1/2. Therefore, our proposed device could be utilized for various optoelectronic devices for low-light detection. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power | - |
dc.type | Article | - |
dc.identifier.wosid | 000459642200103 | - |
dc.identifier.scopusid | 2-s2.0-85061537992 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 7626 | - |
dc.citation.endingpage | 7634 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.8b21629 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.localauthor | Yu, Kyoungsik | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Jeon, Hyun Bae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | p-n junction | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
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