E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs

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dc.contributor.authorKim, Kibeomko
dc.contributor.authorChoi, Junsungko
dc.contributor.authorWoo, Seonghoko
dc.contributor.authorCho, Jaeyongko
dc.contributor.authorAhn, Seungyoungko
dc.date.accessioned2019-07-18T05:31:15Z-
dc.date.available2019-07-18T05:31:15Z-
dc.date.created2019-07-15-
dc.date.issued2019-07-
dc.identifier.citationMICROELECTRONICS RELIABILITY, v.98, pp.161 - 164-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/10203/263295-
dc.description.abstractAn increase in the number of the through-silicon vies (TSVs) per unit area causes the electrical channel in neighboring semiconductor devices to be closer to the depletion region induced by the electric-field (E-field) around the TSV. A keep-out zone (KOZ) is required to ensure the proper operation of three-dimensional integrated circuits (3-D ICs) using TSVs given these negative effects. The proposed method with which to determine the KOZ for 3-D ICs includes procedures for extracting the charges produced during the TSV formation process and for calculating the depletion region from a nonlinear metal-oxide-semiconductor (MOS) capacitance model. The results of a comparison of the proposed method with a previous method show that the charge carriers in the depletion region and charge-type imperfections of in TSV must be considered for an accurate KOZ.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleE-field induced keep-out zone determination method of through-silicon vias for 3-D ICs-
dc.typeArticle-
dc.identifier.wosid000472692700021-
dc.identifier.scopusid2-s2.0-85066241264-
dc.type.rimsART-
dc.citation.volume98-
dc.citation.beginningpage161-
dc.citation.endingpage164-
dc.citation.publicationnameMICROELECTRONICS RELIABILITY-
dc.identifier.doi10.1016/j.microrel.2019.05.007-
dc.contributor.localauthorAhn, Seungyoung-
dc.contributor.nonIdAuthorKim, Kibeom-
dc.contributor.nonIdAuthorChoi, Junsung-
dc.contributor.nonIdAuthorWoo, Seongho-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorThrough-silicon via (TSV)-
dc.subject.keywordAuthorThree-dimensional integrated circuit (3-D IC)-
dc.subject.keywordAuthorMetal-oxide-semiconductor (MOS)-
dc.subject.keywordAuthorKeep-out zone (KOZ)-
dc.subject.keywordPlusLATERAL NONUNIFORMITY-
dc.subject.keywordPlusEXTRACTION-
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