Analysis of vertical phase distribution in reactively sputtered zinc oxysulfide thin films

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Zinc oxysulfide (Zn(O,S)) is widely used for photovoltaic and optoelectronic devices because its electronic properties are tunable with adjustments to the S-to-O composition ratio. Zn(O,S) thin films used in devices are typically assumed to have constant S-to-O composition ratios across their thicknesses. However, S-to-O composition ratio gradients, and thus electronic property variations along the vertical direction, can be naturally induced. Such gradients can enhance device performance. In this work, we analyzed the S-to-O composition ratios along the thickness directions of Zn(O,S) thin films deposited at a fixed O-2 gas flux. Natural O enrichment was observed near the bottom of the film, attributed to the highly reactive nature of the sputtering process. By increasing O-2 gas flux during sputtering, more compositionally uniform thin films were obtained. We suggest that non-uniform phase distribution in the depth direction could be considered for achieving desired composition ratios when depositing Zn(O,S) thin films using reactive sputtering.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2019-08
Language
English
Article Type
Article
Citation

APPLIED SURFACE SCIENCE, v.486, pp.555 - 560

ISSN
0169-4332
DOI
10.1016/j.apsusc.2019.04.200
URI
http://hdl.handle.net/10203/263220
Appears in Collection
MS-Journal Papers(저널논문)
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