Ultrafast carrier dynamics of conformally grown semi-polar (1122) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires

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dc.contributor.authorJohar, Muhammad Aliko
dc.contributor.authorSong, Hyun Gyuko
dc.contributor.authorWaseem, Aadilko
dc.contributor.authorKang, Jin-Hoko
dc.contributor.authorHa, Jun-Seokko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorRyu, Sang-Wanko
dc.date.accessioned2019-06-24T00:50:03Z-
dc.date.available2019-06-24T00:50:03Z-
dc.date.created2019-06-23-
dc.date.created2019-06-23-
dc.date.issued2019-06-
dc.identifier.citationNANOSCALE, v.11, no.22, pp.10932 - 10943-
dc.identifier.issn2040-3364-
dc.identifier.urihttp://hdl.handle.net/10203/262782-
dc.description.abstractThe growth of semi-polar (112 2) GaN/ InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/ InGaN MQW shells are grown in a two-step growth sequence of vapor-liquid-solid and vapor-solid growth modes. The luminescence and carrier dynamics of GaN/ InGaN MQW coaxial nanowires are studied by photoluminescence, cathodoluminescence, and low temperature time-resolved photoluminescence (TRPL). The emission is tuned from 430 nm to 590 nm by increasing the InGaN QW thickness. The non-single exponential decay measured by low-temperature TRPL was attributed to the indium fluctuations in the InGaN QW. The ultrafast radiative lifetime was measured from 14 ps to 26 ps with different emission wavelengths at a very high internal quantum efficiency up to 68%. An ultrafast carrier lifetime was assigned to the growth of the InGaN QW on semipolar (112 <overline> 2) growth facet and the improved carrier collection efficiency due to the radial growth of the GaN/ InGaN MQW shells. Such an ultrafast carrier dynamics of NWs provides a meaningful active medium for high speed optoelectronic applications.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleUltrafast carrier dynamics of conformally grown semi-polar (1122) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires-
dc.typeArticle-
dc.identifier.wosid000470756000035-
dc.identifier.scopusid2-s2.0-85067031212-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue22-
dc.citation.beginningpage10932-
dc.citation.endingpage10943-
dc.citation.publicationnameNANOSCALE-
dc.identifier.doi10.1039/c9nr02823d-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorJohar, Muhammad Ali-
dc.contributor.nonIdAuthorWaseem, Aadil-
dc.contributor.nonIdAuthorKang, Jin-Ho-
dc.contributor.nonIdAuthorHa, Jun-Seok-
dc.contributor.nonIdAuthorRyu, Sang-Wan-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusHIGH-ASPECT-RATIO-
dc.subject.keywordPlusFACILE GROWTH-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusDENSITY-
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