Effect of a magnetic field on thermally stimulated ionization of impurity centers in semiconductors by submillimeter radiation

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The probability of electron tunneling from a bound state into a free state in crossed ac electric and dc magnetic fields is calculated in the quasiclassical approximation. It is shown that a magnetic field decreases the electron tunneling probability. This decreases the probability of thermally activated ionization of deep impurity centers by submillimeter radiation. The logarithm of the ionization probability is a linear function of the squared amplitude of the electric field and increases rapidly with the frequency of the electric field. (C) 2000 MAIK "Nauka/Interperiodica".
Publisher
AMER INST PHYSICS
Issue Date
2000
Language
English
Article Type
Article
Citation

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, v.90, no.1, pp.217 - 221

ISSN
1063-7761
DOI
10.1134/1.559077
URI
http://hdl.handle.net/10203/261947
Appears in Collection
PH-Journal Papers(저널논문)
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