Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink
Self-heating effects (SHEs) in 3-DV-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs. A highly thermally conductive layer is plugged into the macaroni oxide filler as a heat sink. The heat dissipation efficiency is improved by up to 21% in the proposed structure. As a result, the reliability issues induced by SHEs can be avoided in V-NAND flash.
- Issue Date
- 2019-02
- Language
- English
- Article Type
- Article
- Citation
IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.212 - 215
- ISSN
- 0741-3106
- Appears in Collection
- EE-Journal Papers(저널논문)
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