Uniform Cs2SnI6 Thin Films for Lead-Free and Stable Perovskite Optoelectronics via Hybrid Deposition Approaches

Cited 6 time in webofscience Cited 0 time in scopus
  • Hit : 135
  • Download : 0
Herein, we synthesized uniform Cs2SnI6 films by two kinds of hybrid deposition methods by considering volume expansion involved during phase transformations. First, oblique thermal evaporation for CsI followed by SnI4 spin-coating resulted in uniform Cs2SnI6 films free of impurity phases. The rapid expansion (within 10s of spin-coating) from CsI to Cs2SnI6(V=106%) was accommodated by porous CsI films inhibiting crack formation. Excess SnI4 on the Cs2SnI6 after spin-coating was effectively removed by toluene washing without any damages to Cs2SnI6, and optimum deposition parameters were suggested in terms of carrier mobility. Second, annealing CsI with SnI4 vapor at 250 degrees C and post-annealing in the SnI4 and I-2 vapor at 300 degrees C produced Cs2SnI6 film with complete coverage. The slow reaction (70min for a complete conversion) provided sufficient time for complete diffusion of SnI4 into CsI without crack formation even with compact CsI. The nonradiative recombination path in Cs2SnI6 was suppressed by post-annealing in the SnI4- and I-2-atmosphere, as confirmed from the enhanced photoluminescence. [GRAPHICS]
Publisher
KOREAN INST METALS MATERIALS
Issue Date
2019-03
Language
English
Article Type
Article
Citation

ELECTRONIC MATERIALS LETTERS, v.15, no.2, pp.192 - 200

ISSN
1738-8090
DOI
10.1007/s13391-018-00114-7
URI
http://hdl.handle.net/10203/251477
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0