Electrical properties of (Bi3.5La0.5)Ti3O12 thin-films prepared by liquid source misted chemical deposition

Abstract

The (Bi3.5La0.5)Ti3O12 (BLT) thin-films used in this study were fabricated on a Pt(111)/SiO2/Si(100) substrate by a Liquid Source Misted Chemical Deposition (LSMCD) technique. X-ray diffraction patterns showed that the BLT films were crystallized and no other phases were observed when annealed above 650 degrees C. Grain size and remnant polarizations increased with increase in the annealing temperature, while leakage current densities decreased. The remnant polarizations (P-r) increased from 2.0 to 4.8 and 19.0 mu C/cm(2) with increase in the annealing temperature from 650 to 700 and 750 degrees C, respectively. The BLT films annealed at 700 degrees C in O-2 showed a good fatigue resistance of reduced polarization by 10% after 10(9) switching cycles when 9 V of bipolar voltage was applied at a frequency of 40 kHz.