Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers
New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer.
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Issue Date
- 2018-11
- Language
- English
- Article Type
- Article
- Citation
ELECTRONICS LETTERS, v.54, no.24, pp.1399 - 1401
- ISSN
- 0013-5194
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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