Design optimization for an SOI MOEMS accelerometer

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With optimization being vital, the design optimization of a silicon-on-insulator (SOI) micro-opto-electro-mechanical systems accelerometer is discussed in this paper. This process has enabled a simplistic design that employs double-sided deep reactive ion etching (DRIE) on SOI wafer to be able to attain high sensitivity of 294 A mu W/G with a calculated proof mass displacement of 0.066 A mu m/G which was close to ANSYS simulated results of 0.061 A mu m/G. Optimization has also enabled an in-depth study of the effects of the different variables on the overall performance of the device.
Publisher
SPRINGER
Issue Date
2018-01
Language
English
Article Type
Article
Keywords

MEMS; SILICON

Citation

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, v.24, no.1, pp.465 - 472

ISSN
0946-7076
DOI
10.1007/s00542-017-3370-4
URI
http://hdl.handle.net/10203/245715
Appears in Collection
ME-Journal Papers(저널논문)
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