First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

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A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after verifying the ferroelectric characteristics of the HfZrOx (HZO) film using a metal-ferroelectric-metal capacitor. The fabricated synapse showed distinguishable polarization switching behaviors with gradually controllable channel conductance. From neural network simulations using the proposed JL FE FinFET as synapses, the pattern recognition accuracy for hand-written digits was validated to be approximately 80% for neuromorphic applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-09
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448

ISSN
0741-3106
DOI
10.1109/LED.2018.2852698
URI
http://hdl.handle.net/10203/245657
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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