A study of morphological evolution of silicon microstructure based on phase field model

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A three dimensional model for a nano/microfabrications of silicon on nothing (SON) structure based on phase field model has been presented. The temperature induces morphological evolution of silicon substrate has been introduced and suggested as a great possibility for the evolution dynamics. Phase field model is employed to present the morphological evolution of silicon. The numerical simulations represent an efficient verification on the experimental work. The performed work could present a detailed process of the cavity formed in the silicon substrate under high temperature. The mechanism for making the cavity in the silicon substrate is the shape changes, which is caused by surface diffusion and driven by the minimization of their surface energy. The aim of this paper is providing a reliable fabrication process of silicon substrate in high temperature, and control the fabrication process when the annealing is performed. The performed simulation results are well consistent with the experimental works.
Publisher
TAYLOR & FRANCIS LTD
Issue Date
2017
Language
English
Article Type
Article
Keywords

SHAPE TRANSFORMATION; HYDROGEN; TRENCHES; SURFACES

Citation

FERROELECTRICS, v.520, no.1, pp.154 - 158

ISSN
0015-0193
DOI
10.1080/00150193.2017.1375319
URI
http://hdl.handle.net/10203/245449
Appears in Collection
ME-Journal Papers(저널논문)
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