Modeling and mitigation of pad scratching in chemical-mechanical polishing

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In the chemical-mechanical polishing (CMP) of semiconductor structures, such defects as micro- and nano-scale scratches are frequently produced on the surfaces being polished. Recent research shows that not only agglomerated abrasives but the softer pad asperities in frictional contact also scratch the relatively hard surfaces. Accordingly, pad scratching is modeled based on the topography and mechanical properties of pad asperities. Asperity radius, R-a, and the standard deviation of asperity heights, sigma(z), are identified as the key topographical parameters. The theoretical models and experimental results show that pad scratching in CMP can be mitigated by increasing R-a/sigma(z). (C) 2013 CIRP.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2013
Language
English
Article Type
Article
Citation

CIRP ANNALS-MANUFACTURING TECHNOLOGY, v.62, no.1, pp.307 - 310

ISSN
0007-8506
DOI
10.1016/j.cirp.2013.03.069
URI
http://hdl.handle.net/10203/245074
Appears in Collection
ME-Journal Papers(저널논문)
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