Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction

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We report a simple approach to fabricate a pyridinic-N-doped graphene film (N-pGF) without high-temperature heat treatment from perforated graphene oxide (pGO). pGO is produced by a short etching treatment with hydrogen peroxide. GO perforation predominated in a short etching time (similar to 1 h), inducing larger holes and defects compared to pristine GO. The pGO is advantageous to the formation of a pyridinic N-doped graphene because of strong NH3 adsorption on vacancies with oxygen functional groups during the nitrogen-doping process, and the pyridinic-N-doped graphene exhibits good electrocatalytic activity for oxygen reduction reaction (ORR). Using rotating-disk electrode measurements, we confirm that N-pGF undergoes a four-electron-transfer process during the ORR in alkaline and acidic media by possessing sufficient diffusion pathways and readily available ORR active sites for efficient mass transport. A comparison between Pt/N-pGF and commercial Pt/C shows that Pt/N-pGF has superior performance, based on its more positive onset potential and higher limiting diffusion current at -0.5 V.
Publisher
AMER CHEMICAL SOC
Issue Date
2018-05
Language
English
Article Type
Article
Citation

ACS OMEGA, v.3, no.5, pp.5522 - 5530

ISSN
2470-1343
DOI
10.1021/acsomega.8b00400
URI
http://hdl.handle.net/10203/243719
Appears in Collection
EE-Journal Papers(저널논문)
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