(A) multi-node CMOS temperature sensor with the compensation of the reverse early effect error다중 센서 구조를 지원하고, Reverse Early Effect에 의한 오차를 보상한 CMOS 온도 센서

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This paper presents a CMOS temperature sensor which provides the multi-node sensing and adopts the proposed compensation method for the reverse Early effect error in a 0.18um CMOS process. The BJT-based temperature sensor suffers from the non-linearity errors in the temperature. The sources of the non-linearity error are described. The reverse Early effect error which is the dominant source of the non-linearity errors is compen-sated by the proposed analog method. The sensor error appears $-0.2 ^\circ C$ to $1.5 ^\circ C$ before the compensation and $-0.08 ^\circ C$ to $0.32 ^\circ C$ after the compensation over the temperature range of $-50 ^\circ C$ to $150 ^circ C$. The compensated sensor output can be applied to the analog application directly with high accuracy. It is also utilizable in the digital application with a usual ADC. Therefore, this temperature sensor is available in both of the analog and the digital application.
Advisors
Lee, Sang Gugresearcher이상국researcher
Description
한국과학기술원 :전기및전자공학과,
Publisher
한국과학기술원
Issue Date
2015
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2015.2,[vi, 32 p. :]

Keywords

CMOS temperature sensor; reverse Early effect; non-linearity error; compensation; CMOS 온도 센서; 비선형 오차; 보상

URI
http://hdl.handle.net/10203/243220
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=669191&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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