A new simple route to grow Cu(In, Ga)Se-2 thin films with large grains in the co-evaporation process

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dc.contributor.authorKim, Seung Taeko
dc.contributor.authorKim, Kihwanko
dc.contributor.authorYun, Jae Hoko
dc.contributor.authorAhn, Byung Taeko
dc.date.accessioned2018-06-16T07:36:09Z-
dc.date.available2018-06-16T07:36:09Z-
dc.date.created2018-06-11-
dc.date.created2018-06-11-
dc.date.issued2018-08-
dc.identifier.citationCURRENT APPLIED PHYSICS, v.18, no.8, pp.912 - 918-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/10203/242516-
dc.description.abstractIn the conventional three-stage co-evaporation process to grow Cu(In, Ga)Se-2 (CIGS) film, a large grain is achieved by the co-evaporation of Cu and Se on (In, Ga)(2)Se-3 layer at 550 degrees C in the second stage and then a p-type is achieved by the co-evaporation of In, Ga, and Se in the third-stage. We reported a new process where a CIGS film with a large gain and p-type is achieved by evaporation of Cu only in the second stage at 400 degrees C and by the Se annealing in the third stage. In the new process, thermal budget was lowered and the third-stage co-evaporation process was eliminated. It was found that the CIGS gain size increased when the Cu/(In+Ga) ratio was above 0.7 and an addition thin CIGS layer appeared on the CIGS surface. The reaction path with Cu was described in the Cu-In-Se ternary phase diagram. The cell conversion efficiency increased from 9.6 to 15.4% as the Se annealing temperature increased from 400 to 550 degrees C in the third stage, mainly due to the increase of open-circuit voltage and fill factor. Our process demonstrated a new route to grow a CIGS film with a less thermal budget and simpler process in the co-evaporation process.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCU(IN,GA)SE-2 SOLAR-CELLS-
dc.subjectCDS BUFFER-
dc.subjectEFFICIENCY-
dc.subjectCUINSE2-
dc.subjectLAYERS-
dc.titleA new simple route to grow Cu(In, Ga)Se-2 thin films with large grains in the co-evaporation process-
dc.typeArticle-
dc.identifier.wosid000432852100009-
dc.identifier.scopusid2-s2.0-85046770377-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.issue8-
dc.citation.beginningpage912-
dc.citation.endingpage918-
dc.citation.publicationnameCURRENT APPLIED PHYSICS-
dc.identifier.doi10.1016/j.cap.2018.04.013-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorKim, Kihwan-
dc.contributor.nonIdAuthorYun, Jae Ho-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCIGS solar cells-
dc.subject.keywordAuthorCo-evaporation process-
dc.subject.keywordAuthorNew route-
dc.subject.keywordAuthorLow temperature-
dc.subject.keywordAuthorCu evaporation-
dc.subject.keywordAuthorSe annealing-
dc.subject.keywordPlusCU(IN,GA)SE-2 SOLAR-CELLS-
dc.subject.keywordPlusCDS BUFFER-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusCUINSE2-
dc.subject.keywordPlusLAYERS-
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