Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

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dc.contributor.authorMorassi, Martinako
dc.contributor.authorLargeau, Ludovicko
dc.contributor.authorOehler, Fabriceko
dc.contributor.authorSong, Hyun-Gyuko
dc.contributor.authorTravers, Laurentko
dc.contributor.authorJulien, Francois H.ko
dc.contributor.authorHarmand, Jean-Christopheko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorGlas, Frankko
dc.contributor.authorTchernycheva, Mariako
dc.contributor.authorGogneau, Noelleko
dc.date.accessioned2018-05-23T06:43:53Z-
dc.date.available2018-05-23T06:43:53Z-
dc.date.created2018-04-30-
dc.date.created2018-04-30-
dc.date.created2018-04-30-
dc.date.issued2018-04-
dc.identifier.citationCRYSTAL GROWTH & DESIGN, v.18, no.4, pp.2545 - 2554-
dc.identifier.issn1528-7483-
dc.identifier.urihttp://hdl.handle.net/10203/241567-
dc.description.abstractWe investigate the growth mechanism of axially heterostructured InGaN/GaN nanowires (NWs) as a function of the flux conditions. The InGaN heterostructure morphology critically depends on the In/Ga flux ratio affecting the local V/III ratio at the NW growth front. Locally N-rich conditions are associated with tapered island-like morphologies, while metal rich conditions, leading to the formation of a stable Indium adsorbed layer at the NW growth front, promote the growth of heterostructures with a disk-like shape. Based on experimental results and theoretical predictions, we demonstrate that this indium ad-layer acts as a surfactant inducing a modification of the InGaN heterostructure growth mode. The impact of flux conditions and strain relaxation on the Indium incorporation are also addressed. The resulting insertions present abrupt interfaces and a homogeneous In distribution for In contents up to 40%.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectQUANTUM DOTS-
dc.subjectSTRAIN-
dc.subjectALLOYS-
dc.subjectENERGY-
dc.titleMorphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy-
dc.typeArticle-
dc.identifier.wosid000429508200069-
dc.identifier.scopusid2-s2.0-85045003656-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.issue4-
dc.citation.beginningpage2545-
dc.citation.endingpage2554-
dc.citation.publicationnameCRYSTAL GROWTH & DESIGN-
dc.identifier.doi10.1021/acs.cgd.8b00150-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorMorassi, Martina-
dc.contributor.nonIdAuthorLargeau, Ludovic-
dc.contributor.nonIdAuthorOehler, Fabrice-
dc.contributor.nonIdAuthorSong, Hyun-Gyu-
dc.contributor.nonIdAuthorTravers, Laurent-
dc.contributor.nonIdAuthorJulien, Francois H.-
dc.contributor.nonIdAuthorHarmand, Jean-Christophe-
dc.contributor.nonIdAuthorGlas, Frank-
dc.contributor.nonIdAuthorTchernycheva, Maria-
dc.contributor.nonIdAuthorGogneau, Noelle-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusSTRAIN-
dc.subject.keywordPlusALLOYS-
dc.subject.keywordPlusENERGY-
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