DC Field | Value | Language |
---|---|---|
dc.contributor.author | Morassi, Martina | ko |
dc.contributor.author | Largeau, Ludovic | ko |
dc.contributor.author | Oehler, Fabrice | ko |
dc.contributor.author | Song, Hyun-Gyu | ko |
dc.contributor.author | Travers, Laurent | ko |
dc.contributor.author | Julien, Francois H. | ko |
dc.contributor.author | Harmand, Jean-Christophe | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Glas, Frank | ko |
dc.contributor.author | Tchernycheva, Maria | ko |
dc.contributor.author | Gogneau, Noelle | ko |
dc.date.accessioned | 2018-05-23T06:43:53Z | - |
dc.date.available | 2018-05-23T06:43:53Z | - |
dc.date.created | 2018-04-30 | - |
dc.date.created | 2018-04-30 | - |
dc.date.created | 2018-04-30 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.citation | CRYSTAL GROWTH & DESIGN, v.18, no.4, pp.2545 - 2554 | - |
dc.identifier.issn | 1528-7483 | - |
dc.identifier.uri | http://hdl.handle.net/10203/241567 | - |
dc.description.abstract | We investigate the growth mechanism of axially heterostructured InGaN/GaN nanowires (NWs) as a function of the flux conditions. The InGaN heterostructure morphology critically depends on the In/Ga flux ratio affecting the local V/III ratio at the NW growth front. Locally N-rich conditions are associated with tapered island-like morphologies, while metal rich conditions, leading to the formation of a stable Indium adsorbed layer at the NW growth front, promote the growth of heterostructures with a disk-like shape. Based on experimental results and theoretical predictions, we demonstrate that this indium ad-layer acts as a surfactant inducing a modification of the InGaN heterostructure growth mode. The impact of flux conditions and strain relaxation on the Indium incorporation are also addressed. The resulting insertions present abrupt interfaces and a homogeneous In distribution for In contents up to 40%. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | QUANTUM DOTS | - |
dc.subject | STRAIN | - |
dc.subject | ALLOYS | - |
dc.subject | ENERGY | - |
dc.title | Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000429508200069 | - |
dc.identifier.scopusid | 2-s2.0-85045003656 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 2545 | - |
dc.citation.endingpage | 2554 | - |
dc.citation.publicationname | CRYSTAL GROWTH & DESIGN | - |
dc.identifier.doi | 10.1021/acs.cgd.8b00150 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Morassi, Martina | - |
dc.contributor.nonIdAuthor | Largeau, Ludovic | - |
dc.contributor.nonIdAuthor | Oehler, Fabrice | - |
dc.contributor.nonIdAuthor | Song, Hyun-Gyu | - |
dc.contributor.nonIdAuthor | Travers, Laurent | - |
dc.contributor.nonIdAuthor | Julien, Francois H. | - |
dc.contributor.nonIdAuthor | Harmand, Jean-Christophe | - |
dc.contributor.nonIdAuthor | Glas, Frank | - |
dc.contributor.nonIdAuthor | Tchernycheva, Maria | - |
dc.contributor.nonIdAuthor | Gogneau, Noelle | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | ENERGY | - |
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