Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

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We investigate the growth mechanism of axially heterostructured InGaN/GaN nanowires (NWs) as a function of the flux conditions. The InGaN heterostructure morphology critically depends on the In/Ga flux ratio affecting the local V/III ratio at the NW growth front. Locally N-rich conditions are associated with tapered island-like morphologies, while metal rich conditions, leading to the formation of a stable Indium adsorbed layer at the NW growth front, promote the growth of heterostructures with a disk-like shape. Based on experimental results and theoretical predictions, we demonstrate that this indium ad-layer acts as a surfactant inducing a modification of the InGaN heterostructure growth mode. The impact of flux conditions and strain relaxation on the Indium incorporation are also addressed. The resulting insertions present abrupt interfaces and a homogeneous In distribution for In contents up to 40%.
Publisher
AMER CHEMICAL SOC
Issue Date
2018-04
Language
English
Article Type
Article
Keywords

QUANTUM DOTS; STRAIN; ALLOYS; ENERGY

Citation

CRYSTAL GROWTH & DESIGN, v.18, no.4, pp.2545 - 2554

ISSN
1528-7483
DOI
10.1021/acs.cgd.8b00150
URI
http://hdl.handle.net/10203/241567
Appears in Collection
PH-Journal Papers(저널논문)
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