DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sung Won | ko |
dc.contributor.author | Shin, Minkwan | ko |
dc.contributor.author | Park, Jae Yoon | ko |
dc.contributor.author | Kim, Bong Soo | ko |
dc.contributor.author | Tu, Deyu | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Jeong, Unyong | ko |
dc.date.accessioned | 2018-03-21T02:53:28Z | - |
dc.date.available | 2018-03-21T02:53:28Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.citation | SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240779 | - |
dc.description.abstract | Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | LOW-VOLTAGE | - |
dc.subject | FILM TRANSISTORS | - |
dc.subject | ORGANIC ELECTRONICS | - |
dc.subject | INSULATOR | - |
dc.subject | TRANSPORT | - |
dc.subject | DENSITY | - |
dc.subject | LIQUID | - |
dc.title | Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000349140900008 | - |
dc.identifier.scopusid | 2-s2.0-84961289052 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 874 | - |
dc.citation.endingpage | 880 | - |
dc.citation.publicationname | SCIENCE OF ADVANCED MATERIALS | - |
dc.identifier.doi | 10.1166/sam.2015.1890 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Lee, Sung Won | - |
dc.contributor.nonIdAuthor | Shin, Minkwan | - |
dc.contributor.nonIdAuthor | Park, Jae Yoon | - |
dc.contributor.nonIdAuthor | Kim, Bong Soo | - |
dc.contributor.nonIdAuthor | Tu, Deyu | - |
dc.contributor.nonIdAuthor | Jeong, Unyong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Organic Thin Film Transistors | - |
dc.subject.keywordAuthor | Polymer Transistors | - |
dc.subject.keywordAuthor | Ion-Gel Dielectric | - |
dc.subject.keywordAuthor | High Capacitance | - |
dc.subject.keywordAuthor | Device Stability | - |
dc.subject.keywordAuthor | poly(3-hexylthiophene) | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | FILM TRANSISTORS | - |
dc.subject.keywordPlus | ORGANIC ELECTRONICS | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | LIQUID | - |
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